制造商 | Manufacturer | InterFET |
RoHS | Rohs | Y |
安装风格 | Mounting Style | Through Hole |
封装 / 箱体 | Package_Case | TO-18-3 |
晶体管极性 | Transistor Polarity | N-Channel |
配置 | Configuration | Single |
Vds-漏源极击穿电压 | Vds_Drain_Source Breakdown Voltage | 10 V |
Vgs-栅源极击穿电压 | Vgs_Gate_Source Breakdown Voltage | 15 V |
Rds On-漏源导通电阻 | Rds On_Drain_Source Resistance | 60 Ohms |
Pd-功率耗散 | Pd_Power Dissipation | 300 mW |
系列 | Series | VCR2N |
封装 | Packaging | Bulk |
类型 | Type | JFET |
商标 | Brand | InterFET |
闸/源截止电压 | Gate_Source Cutoff Voltage | 3.5 V |
产品类型 | Product Type | JFETs |
标准包装数量 | Standard Pack Qty | 1 |
子类别 | Subcategory | Transistors |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | JANTX1N4102DUR-1/TR | 0 | InterFET | ||
2 | ES1G E3 | 0 | InterFET | ||
3 | TK6A53D(STA4,Q,M) | 0 | InterFET | ||
4 | NVB190N65S3F | 10400 | InterFET | ||
5 | V20M120M-E3/4W | 0 | InterFET | ||
6 | MUR4L40 B0G | 0 | InterFET | ||
7 | CPH6153-TL-E | 0 | InterFET | ||
8 | BZD17C13P RQ | 0 | InterFET | ||
9 | SR102 R0G | 0 | InterFET | ||
10 | HT16GHB0G | 0 | InterFET | ||
11 | BZX79C6V2 | 0 | InterFET | ||
12 | SRAS850 RN | 0 | InterFET | ||
13 | MSB30M-13 | 2018/2240/2244 | 513 | InterFET | |
14 | DTA144EMT2L | 8000 | InterFET | ||
15 | MJD31CRLG | 2019 | 2012 | InterFET | |
16 | BZD27B12P-HE3-18 | 0 | InterFET | ||
17 | IRF7910TRPBF | 13+ | 4000 | InterFET | |
18 | 1F6-T | 0 | InterFET | ||
19 | SI7460DP-T1-GE3 | 79 | InterFET | ||
20 | CDLL5946B | 0 | InterFET |