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IRF640NSTRRPBF
国内现货
今日价格:
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名称：IRF640NSTRRPBF
品牌：Infineon
说明：MOSFET 200V 1 N-CH HEXFET 150mOhms 44.7nC
系列：
货期：两周
规格参数
价格走势
| 制造商 | Manufacturer | Infineon |
| RoHS | Rohs | Y |
| 技术 | Technology | Si |
| 安装风格 | Mounting Style | SMD/SMT |
| 封装 / 箱体 | Package_Case | D2PAK-3 |
| 晶体管极性 | Transistor Polarity | N-Channel |
| 通道数量 | Number Of Channels | 1 Channel |
| Vds-漏源极击穿电压 | Vds_Drain_Source Breakdown Voltage | 200 V |
| Id-连续漏极电流 | Id_Continuous Drain Current | 18 A |
| Rds On-漏源导通电阻 | Rds On_Drain_Source Resistance | 150 mOhms |
| Vgs - 栅极-源极电压 | Vgs_Gate_Source Voltage | 20 V |
| Vgs th-栅源极阈值电压 | Vgs Th_Gate_Source Threshold Voltage | 4 V |
| Qg-栅极电荷 | Qg_Gate Charge | 44.7 nC |
| 最小工作温度 | Minimum Operating Temperature | - 55 C |
| 最大工作温度 | Maximum Operating Temperature | + 175 C |
| Pd-功率耗散 | Pd_Power Dissipation | 150 W |
| 通道模式 | Channel Mode | Enhancement |
| 封装 | Packaging | Cut Tape |
| 封装 | Packaging | MouseReel |
| 封装 | Packaging | Reel |
| 配置 | Configuration | Single |
| 高度 | Height | 2.3 mm |
| 长度 | Length | 6.5 mm |
| 晶体管类型 | Transistor Type | 1 N-Channel |
| 类型 | Type | HEXFET Power MOSFET |
| 宽度 | Width | 6.22 mm |
| 商标 | Brand | Infineon / IR |
| 正向跨导 - 最小值 | Forward Transconductance_Min | 6.8 S |
| 下降时间 | Fall Time | 5.5 ns |
| 产品类型 | Product Type | MOSFET |
| 上升时间 | Rise Time | 19 ns |
| 标准包装数量 | Standard Pack Qty | 800 |
| 子类别 | Subcategory | MOSFETs |
| 典型关闭延迟时间 | Typical Turn_Off Delay Time | 23 ns |
| 典型接通延迟时间 | Typical Turn_On Delay Time | 10 ns |
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