制造商 | Manufacturer | TT Electronics |
晶体管极性 | Transistor Polarity | N-Channel |
技术 | Technology | Si |
Id-连续漏极电流 | Id_Continuous Drain Current | 2 A |
Vds-漏源极击穿电压 | Vds_Drain_Source Breakdown Voltage | 40 V |
增益 | Gain | 10 dB |
输出功率 | Output Power | 2.5 W |
最大工作温度 | Maximum Operating Temperature | + 150 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | DP |
配置 | Configuration | Single |
高度 | Height | 5.08 mm |
长度 | Length | 18.92 mm |
工作频率 | Operating Frequency | 1 GHz |
类型 | Type | RF Power MOSFET |
宽度 | Width | 6.35 mm |
商标 | Brand | Semelab / TT Electronics |
通道模式 | Channel Mode | Enhancement |
Pd-功率耗散 | Pd_Power Dissipation | 17.5 W |
产品类型 | Product Type | RF MOSFET Transistors |
标准包装数量 | Standard Pack Qty | 25 |
子类别 | Subcategory | MOSFETs |
Vgs - 栅极-源极电压 | Vgs_Gate_Source Voltage | 20 V |
Vgs th-栅源极阈值电压 | Vgs Th_Gate_Source Threshold Voltage | 1 V to 7 V |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | HMC646LP2ETR | 0 | TT Electronics | ||
2 | CYW20736A1KML2GT | NA | 0 | TT Electronics | |
3 | CC1125RHBT | 0 | TT Electronics | ||
4 | HMC326MS8GTR | 0 | TT Electronics | ||
5 | PXV1220S-2DBN8-T02 | 0 | TT Electronics | ||
6 | ISL55015IEZ-T7 | 0 | TT Electronics | ||
7 | CY25200KFZXCT | 0 | TT Electronics | ||
8 | SKY65111-348LF | 0 | TT Electronics | ||
9 | QPA5389ATR13 | 0 | TT Electronics | ||
10 | MRFX600GSR5 | 0 | TT Electronics | ||
11 | QPC1217QTR13-5K | 0 | TT Electronics | ||
12 | A1031 | 0 | TT Electronics | ||
13 | LX5589HLQ | 0 | TT Electronics | ||
14 | BGA7M1N6E6327XTSA1 | 0 | TT Electronics | ||
15 | HMC524ALC3BTR | 0 | TT Electronics | ||
16 | ST25DV04K-IER6T3 | 五年内 | 12388 | TT Electronics | |
17 | GTRA384802FC-V1-R0 | 0 | TT Electronics | ||
18 | MMRF2010GNR1 | 0 | TT Electronics | ||
19 | CD74HC4046APWRE4 | 0 | TT Electronics | ||
20 | LX5560LL-TR | 五年内 | 939 | TT Electronics |