制造商 |
Manufacturer |
Texas Instruments |
RoHS |
Rohs |
Y |
技术 |
Technology |
Si |
安装风格 |
Mounting Style |
SMD/SMT |
封装 / 箱体 |
Package_Case |
WSON-6 |
晶体管极性 |
Transistor Polarity |
N-Channel |
通道数量 |
Number Of Channels |
1 Channel |
Vds-漏源极击穿电压 |
Vds_Drain_Source Breakdown Voltage |
30 V |
Id-连续漏极电流 |
Id_Continuous Drain Current |
5 A |
Rds On-漏源导通电阻 |
Rds On_Drain_Source Resistance |
30 mOhms |
Vgs - 栅极-源极电压 |
Vgs_Gate_Source Voltage |
8 V |
Vgs th-栅源极阈值电压 |
Vgs Th_Gate_Source Threshold Voltage |
900 mV |
Qg-栅极电荷 |
Qg_Gate Charge |
2.1 nC |
最小工作温度 |
Minimum Operating Temperature |
- 55 C |
最大工作温度 |
Maximum Operating Temperature |
+ 150 C |
Pd-功率耗散 |
Pd_Power Dissipation |
17 W |
通道模式 |
Channel Mode |
Enhancement |
商标名 |
Tradename |
NexFET |
封装 |
Packaging |
Cut Tape |
封装 |
Packaging |
MouseReel |
封装 |
Packaging |
Reel |
配置 |
Configuration |
Single |
高度 |
Height |
0.75 mm |
长度 |
Length |
2 mm |
系列 |
Series |
CSD17313Q2 |
晶体管类型 |
Transistor Type |
1 N-Channel Power MOSFET |
宽度 |
Width |
2 mm |
商标 |
Brand |
Texas Instruments |
开发套件 |
Development Kit |
TMDSCSK388, TMDSCSK8127 |
下降时间 |
Fall Time |
1.3 ns |
产品类型 |
Product Type |
MOSFET |
上升时间 |
Rise Time |
3.9 ns |
标准包装数量 |
Standard Pack Qty |
3000 |
子类别 |
Subcategory |
MOSFETs |
典型关闭延迟时间 |
Typical Turn_Off Delay Time |
4.2 ns |
典型接通延迟时间 |
Typical Turn_On Delay Time |
2.8 ns |