制造商 | Manufacturer | InterFET |
RoHS | Rohs | Y |
技术 | Technology | Si |
安装风格 | Mounting Style | Through Hole |
封装 / 箱体 | Package_Case | TO-71-6 |
晶体管极性 | Transistor Polarity | N-Channel |
配置 | Configuration | Dual |
Vds-漏源极击穿电压 | Vds_Drain_Source Breakdown Voltage | 20 V |
Vgs-栅源极击穿电压 | Vgs_Gate_Source Breakdown Voltage | - 50 V |
Vgs=0时的漏-源电流 | Drain_Source Current At Vgs_0 | 5 mA |
Id-连续漏极电流 | Id_Continuous Drain Current | 200 uA |
Pd-功率耗散 | Pd_Power Dissipation | 250 mW |
系列 | Series | 2N39 |
封装 | Packaging | Bulk |
类型 | Type | JFET |
商标 | Brand | InterFET |
正向跨导 - 最小值 | Forward Transconductance_Min | 1000 uS |
闸/源截止电压 | Gate_Source Cutoff Voltage | - 4.5 V |
产品类型 | Product Type | JFETs |
标准包装数量 | Standard Pack Qty | 1 |
子类别 | Subcategory | Transistors |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | UMH25NFHATN | NA | 350 | InterFET | |
2 | RS1E350GNTB | NA | 100 | InterFET | |
3 | BZT52B6V2 | 0 | InterFET | ||
4 | MMSZ5248C-E3-18 | 10000 | InterFET | ||
5 | 1N5923BRLG | 0 | InterFET | ||
6 | STPS2L60AFN | 0 | InterFET | ||
7 | PMBD6100,215 | 0 | InterFET | ||
8 | BAT854AW,115 | 0 | InterFET | ||
9 | DDC142TU-7-F | 0 | InterFET | ||
10 | HS1K R3 | 0 | InterFET | ||
11 | JANTXV1N4966 | 0 | InterFET | ||
12 | MMSZ5258BT1G | 2306160002 | 2500 | InterFET | |
13 | DD540N22K | 0 | InterFET | ||
14 | JAN1N3016CUR-1/TR | 0 | InterFET | ||
15 | SZBZX84C3V9ET3G | 0 | InterFET | ||
16 | BUK9Y19-100E,115 | 897 | InterFET | ||
17 | PBSS5160PAP,115 | 0 | InterFET | ||
18 | SIA918EDJ-T1-GE3 | 0 | InterFET | ||
19 | HS5FHV6G | 0 | InterFET | ||
20 | MBR10200 C0 | 0 | InterFET |