制造商 | Manufacturer | Toshiba |
RoHS | Rohs | Y |
配置 | Configuration | Single |
晶体管极性 | Transistor Polarity | PNP |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | SC-59-3 |
直流集电极/Base Gain hfe Min | Dc Collector_Base Gain Hfe Min | 90 |
集电极—发射极最大电压 VCEO | Collector_Emitter Voltage Vceo Max | - 50 V |
Pd-功率耗散 | Pd_Power Dissipation | 200 mW |
最小工作温度 | Minimum Operating Temperature | - 55 C |
最大工作温度 | Maximum Operating Temperature | + 150 C |
系列 | Series | RN2425 |
封装 | Packaging | Cut Tape |
封装 | Packaging | MouseReel |
封装 | Packaging | Reel |
集电极—基极电压 VCBO | Collector_Base Voltage Vcbo | - 50 V |
发射极 - 基极电压 VEBO | Emitter_Base Voltage Vebo | - 5 V |
商标 | Brand | Toshiba |
最大直流电集电极电流 | Maximum Dc Collector Current | - 800 mA |
产品类型 | Product Type | BJTs - Bipolar Transistors - Pre-Biased |
标准包装数量 | Standard Pack Qty | 3000 |
子类别 | Subcategory | Transistors |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | JANTX1N4987US | 0 | Toshiba | ||
2 | AR4PJHM3_A/H | 0 | Toshiba | ||
3 | TIP122-BP | 0 | Toshiba | ||
4 | 2N3420 | 0 | Toshiba | ||
5 | BZX55B3V3-TR | 0 | Toshiba | ||
6 | FEP30HP-E3/45 | 0 | Toshiba | ||
7 | BAS716,115 | 1361 | Toshiba | ||
8 | DMN10H170SFG-7 | 0 | Toshiba | ||
9 | EABS1G REG | 0 | Toshiba | ||
10 | SD103BW-7-F | 1900 | Toshiba | ||
11 | TZX4V7C-TR | 0 | Toshiba | ||
12 | NDCTR20120A | 0 | Toshiba | ||
13 | DTA114EET1G | 39000 | Toshiba | ||
14 | BZT52B27 RH | 0 | Toshiba | ||
15 | 1N5364Be3/TR12 | 0 | Toshiba | ||
16 | NVTFS4C25NWFTAG | 1170 | Toshiba | ||
17 | VS-1N1188R | 0 | Toshiba | ||
18 | IXKC20N60C | 0 | Toshiba | ||
19 | JANTXV1N3044B-1/TR | 0 | Toshiba | ||
20 | SF34-B | 0 | Toshiba |